Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices.

This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features.

Contents: Terrestrial Neutron Spectrometry and Dosimetry; Irradiation Testing in the Terrestrial Field; Neutron Irradiation Test Facilities; Review and Discussion of Experimental Data; Monte Carlo Simulation Methods; Simulation Results and Their Implications; International Standardization of the Neutron Test Method; Summary and Challenges.

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